Papers & Presentations

Modeling Remote H2 Plasma in a Semiconductor Processing Tool

J. Brcka
TEL Technology Center, America, LLC

The concentration isosurfaces for the various species

Hydrogen plasma is typically used in the semiconductor industry for materials processing, surface preparation and cleaning of silicon wafers and thin films.

In this contribution, we developed a 2D/3D plasma fluid model as described by the set of the species and energy balance equations in a generic semiconductor tool chamber with remote Inductively Coupled Plasma (ICP) source.

Background H2 gas flow is described by the incompressible Navier-Stokes equations for low speed isothermal flow, and where the plasma composition is described by the multiple diffusion and convection application modes. The electrostatics mode for electric potential distribution was involved into coupling scheme to satisfy a plasma quasi-neutrality condition, and to couple E r field to an ambipolar diffusion coefficient.

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