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May 19, 2012 2:22pm UTC

Thin Film BAW Composite Resonator simulation in COMOSL 3.5a

I'm currently engaged in the simulation of FBAR device in COMSOL 3.5a, and want to use this model.

However, "in the model library", I find that the admittance of electrode is defined as "0.5[mm]*nJs_smppn/1[V]", where 0.5[mm] is the width of the electrode, and "nJs_smppn" is the surface current density, which I don't know why, because we use the integration coupling variables, and the width of the electrode is the variable.

Then why we use the "0.5[mm]*nJs_smppn/1[V]", but not the "1.7[mm]*nJs_smppn/1[V]", where 1.7[mm] is the thickness of the 2D scheme of FBAR device.

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January 7, 2013 8:04am UTC in response to Vidya Shree Niranjan

Re: Thin Film BAW Composite Resonator simulation in COMOSL 3.5a

Hello vidya and Jianan,
I'm working on Design and Analysis of Thin Film Bulk Acoustic Resonator. I'm new to the COMSOL. Can you please suggest the design considerations for designing BAW for particular resonant frequency, what relationship or formula should I establish between resonant frequency and electrode thickness, thickness of substrate, etc. Please help.
Thanks in advance

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