Caughey-Thomas Mobility in a Semiconductor
Model ID: 15561
With an increase in the parallel component of the applied field, carriers can gain energies above the ambient thermal energy and be able to transfer energy gained by the field to the lattice by optical phonon emission. The latter effect leads to a saturation of the carriers mobility. The Caughey Thomas mobility model adds high field velocity scattering to an existing mobility model (or to a constant input mobility).
This model demonstrates how to use the Caughey-Thomas high field saturation model for the electron and hole mobility. Field dependent mobility makes a problem which is already highly non-linear even more non-linear. It is necessary to use the continuation study extension to obtain convergence in the high field limit.
This model was built using the following:Semiconductor Module
- caughey_thomas_mobility.mph *
- models.semicond.caughey_thomas_mobility.pdf - 0.57MB
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