Lombardi Surface Mobility in a Semiconductor

Model ID: 15579


Surface acoustic phonons and surface roughness have an important effect on the carrier mobility, especially in the thin inversion layer under the gate in MOSFETs. The Lombardi surface mobility model adds surface scattering resulting from these effects to an existing mobility model using Matthiessen’s rule.

This model demonstrates how to use the Lombardi surface mobility model for the electron mobility in a simple MOSFET. The current density profile and total current flowing into the terminal is compared with the constant mobility case.

This model was built using the following:

Semiconductor Module

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