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Dynamic Simulation of Electrochemical Etching of Silicon with COMSOL


A. Ivanov1 U. Mescheder1
1Furtwangen University, Furtwangen, Germany


Concentration distribution and etch form after 4000 s for diffusion-controlled anodization process.

In the presented work the dynamic simulation of a silicon anodization process is performed. Two mechanisms of etch form development (diffusion in electrolyte, current flow) are considered and simulated. Influence of electrolyte conductivity and radius of the opening in the masking layer is discussed.

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