Analysis of RF Characteristics of a Compound Semiconductor Device Integrated with a Wide-Band Antenna for THz Wireless Communications
A. Tashiro1 M. Nakamura1 M. Suhara1
1Tokyo Metropolitan University, Hachioji City, Tokyo, Japan
Use of the terahertz(THz) region, which is unexplored frequency band, is investigated and expected for the next-generation high-speed wireless communication. In this presentation, we propose a monolithic integrated device by using mesa-shaped compound semiconductor and a thin-metal broadband antenna which is capable in THz operation, and we analyze several characteristics of the device by using COMSOL Multiphysics and the RF Module.