Analysis of RF Characteristics of a Compound Semiconductor Device Integrated with a Wide-Band Antenna for THz Wireless Communications

A. Tashiro[1], M. Nakamura[1], M. Suhara[1]
[1]Tokyo Metropolitan University, Hachioji City, Tokyo, Japan

Use of the terahertz(THz) region, which is unexplored frequency band, is investigated and expected for the next-generation high-speed wireless communication. In this presentation, we propose a monolithic integrated device by using mesa-shaped compound semiconductor and a thin-metal broadband antenna which is capable in THz operation, and we analyze several characteristics of the device by using COMSOL Multiphysics and the RF Module.

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