Design of a MEMS Resonator for a Centre Frequency Greater than 26.35 MHz and Temperature Coefficient Frequency Less than 0.5 ppm

S.Manikandan[1], R.Radeep krishna[1]
[1]Kalasalingam University, Department of ECE, Srivilliputtur ,Krishnan koil, Tamil Nadu, India
Published in 2013

The variability of the design parameters caused by material properties like thermal conductivity is the major challenge in Micro Electromechanical System (MEMS). In resonator design the basic problem is that the frequency changes with temperature variation and quantitative explanation with respect to this varies. The change can be attributed to the stability in terms of frequency drift in parts per million (ppm) and Temperature coefficient of frequency (TCF).The research going on now a days for temperature compensated resonator with high q.The Expected result of the resonator should have a center frequency above 40 MHz and temperature coefficient of frequency nearer to zero. To achieve temperature compensation the Sio2 (Silicon dioxide) with thermal conductivity of 0.014 (W/cm-oC) is integrated in resonator body.