Dynamic Simulation of Electrochemical Etching of Silicon with COMSOL

A. Ivanov[1], U. Mescheder[1]
[1]Furtwangen University, Furtwangen, Germany

In the presented work the dynamic simulation of a silicon anodization process is performed. Two mechanisms of etch form development (diffusion in electrolyte, current flow) are considered and simulated. Influence of electrolyte conductivity and radius of the opening in the masking layer is discussed.