Modeling of Charge Transport in Ion Bipolar Junction Transistors

A.V. Volkov[1], K. Tybrandt[1], I.V. Zozoulenko[1], M. Berggren[1]
[1]Organic Electronics, ITN, Linköping University, Norrköping, Sweden

Modeling of an ion bipolar junction transistor (IBJT) is performed using the COMSOL Multiphysics® software. Our model describes the IBJT which was developed and characterized [1]. The IBJT under consideration consists of an anion-selective collector and emitter, a cation-selective base and a neutral junction. The physical model is based on Poisson and Nernst-Planck (PNP) equations. A two dimensional model of the device is employed which successfully reproduces the main characteristics of the measured data, such as the transfer and output characteristics. We study the concentration and potential profiles for the active, saturation and cutoff operation modes of the IBJT.