Modeling transport in silicon nanocrystal structure

Leroy, Y., Leriche, B., Cordan, A.S.
InESS — ENSPS, UMR 7163, ILLKIRCH, France

We present in this paper a model to study new memory devices with embedded nanocrystals, emerging in microelectronics. The theoretical calculations and their implementation in FEMLAB are detailed, leading to a quite simple and realistic model.

One key point for these memories is the electronic tunnel transfer to store the charge into a nanocrystal. This is why we carry out a brief analysis of tunnel matrix elements to illustrate our model.

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