Optimization of a High-Temperature High-Pressure Direct Wafer Bonding Process for III-V Semiconductors

R. Martin, J. Kozak, K. Anglin, and W. Goodhue
University of Massachusetts Lowell
Lowell, MA

Many optoelectronic devices utilize a heterojunction of a pair semiconducting materials including high-efficiency MEMS devices, solar cells, LEDs, and VCSELs. One fabrication technique which achieves such a device is direct wafer fusion.

To optimize the process, COMSOL Multiphysics 4.0 was used to test various geometric configurations of the fixture. 2D and 3D models were created in order to highlight specific aspects of the process, both of which incorporated the thermal expansion feature of the Structural Mechanics module.

Using the results of COMSOL simulations, we present an improved architecture for consistent realization of this wafer-fusion technique.

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