G. Louarn, M. Collet, and S. Cuenot
Institut des Matériaux Jean Rouxel, Nantes
In this work, we present the modeling of V-shaped silicon micro-cantilevers. The sensitivity of different V-shaped silicon cantilevers is estimated, as a function of the geometrical dimensions of the cantilever.
Northwestern University, Evanston, IL, USA
Dye sensitized solar cells (DSSCs) have received tremendous attention as alternative photon harvesting devices. While the sintered TiO2 nanoparticle network attached with dye molecules achieves efficient photon absorption, the electrons have to diffuse through the long TiO2 network to reach the contact, resulting in a high electron density and thus increased recombination. Extensive research ...
S. Sihn[1,2], and A.K. Roy
Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio, USA
University of Dayton Research Institute, Dayton, Ohio, USA
COMSOL Multiphysics was used to solve a phonon Boltzmann transport equation (BTE) for nanoscale heat transport problems. One dimensional steady-state and transient BTE problems were successfully solved based on finite element and discrete ordinate methods for spatial and angular discretizations, respectively, by utilizing the built-in feature of the COMSOL, Coefficient Form of PDE.
S.D. Ekpe, F. Jimenez, and S.K. Dew
University of Alberta, Edmonton
This work is focused on the coupling of a Monte Carlo code with COMSOL Multiphysics conduction/convection, and electrostatic modules in solving fluid-Poisson model for the plasma properties for a practical DC magnetron low pressure plasma discharge. The magnetostatic module was used in calculating the required magnetic field.
NanoScience Simulation Laboratory, Department of Physics, Fu Jen Catholic University, Taipei County, Taiwan
The Child-Langmuir law gives the maximum electron current, known as the space-charge-limited current, which arises because the space charge in the diode presents a potential barrier to the incident electrons. While there are modifications due to geometrical and relativistic effects, the limited current remains a fundamental quantity characterizing the beam-gap interaction. In the research of ...
Coupled Mechanical/Piezoelectric/Quantum Simulation of Strained Semiconductor InAs Quantum Dots (QD) Emitting at Long Wavelength
J. Even1, F. Doré1, C. Cornet1, L. Pedesseau1, A. Schliwa2, and D. Bimberg2
1FOTON/INSA, CNRS, Rennes, France
2Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Germany
The eight-band k.p model of strained zincblende crystals has been extensively used to describe the electronic structure of III-V semiconductor nanostructures.in the present work, we propose to extend these approaches in order to provide a fast and easy method to evaluate the electronic spectra of narrow-gap semiconductor Quantum Dots.A complete 2D axi-symmetric model is proposed for the ...
R. Yan1, D. Lynch2, T. Cayron3, D. Lederer1, A. Afzalian1, C. W. Lee1, and J. P. Colinge1
1Tyndall National Institute, Lee Maltings, Prospect Row, Cork, Ireland
2University College Cork, Cork, Ireland
3Institut National Polytechnique, Grenoble, France
In this paper, we investigate random doping fluctuation effects in Trigate SOI MOSFETs by solving the 3D Poisson, Drift-diffusion and Continuity equations numerically.The presence of a single doping impurity atom induces a threshold voltage (VTH) shift in the transistor. The threshold shift depends on the polarity and the physical location of the impurity atom. Our results show that the typical ...
F. Cacho, V. Fiori, C. Chappaz, C. Tavernier, and H. Jaouen
STMicroelectronics, Crolles, France
In advanced semiconductor devices, most of the reliability issues in interconnects occur at a local scale. More precisely, the voiding phenomenon in copper lines is one of the key issues. Hence, a better understanding of the mechanisms governing electromigration would enable the development of more accurate predictive models.A model of vacancy migration is proposed. The thermal, stress and ...
O. Geoffroy, and H. Rouch,
INOPRO Telespace Vercors, Grenoble, France
A microwave plasma simulation has been tested, and will be fitted and validated. Two types of assumptions were compared: in the first approach the plasma density depends directly on the electric field and some characteristic values of it; in the second approach, plasma density and temperature conservation equations are solved.The second approach was used for Nitrogen plasma. In the case of SF6 ...
O. Geoffroy, and H. Rouch
INOPRO, Telespace Vercors, Grenoble, France
The purpose of this work is to understand and model the electromagnetic field inside a microwave reactor, in order to study the interaction between the reactor and plasma discharge. The first goal of this study is to characterize the antenna / plasma coupling. The electric field interacts with the plasma discharge via a set of input parameters: the permittivity and the conductivity related to ...