One of the most important requirements of any integrated optical technology is the ability to perform optical modulation, which permits to encode a bit stream onto the optical carrier provided by the laser source. In this paper a... COMSOL Conference 2006, Milan F. Dell’Olio, F. De Leonardis, and V.M.N. Passaro Politecnico di Bari
A 2D multiphysics model has been developed to simulate heterojunctions separating abruptly doped semiconductor layers of different dopant concentrations. Numerical results are presented for the case of nN, pN and PpN heterojunctions,... COMSOL Conference 2006, Boston R. Millett1 , J. Wheeldon2 , T. Hall1 , and H. Schriemer 1,2 1 Centre for Research in Photonics, School of Information Technology and Engineering, University of Ottawa, Canada 2 Centre for Research in Photonics, Dept. of Physics, University of Ottawa, Canada
This paper discusses the impact and modeling of stress experienced during the silicon fabrication process for Mosfets. The work addresses some of the issues that come up while trying to model the impact strain has on device... COMSOL Conference 2006, Boston A. Kalavagunta Vanderbilt University
In this presentation we outline our recent work on Magnetic Liquids, and the great number of application areas these are used. Ferrofluids are nanometer sized magnetic particles, covered by a surfactant, suspended in a carrier medium... COMSOL Conference 2006, Boston H. Köser Yale University
The motion of free charge carriers in semiconductors was simulated using the convection and diffusion module in COMSOL. The focus of this work is the sensor layer of the Medipix2 x-ray detector, in our case made of silicon. The charge... COMSOL Conference 2006, Frankfurt B. Kreisler, G. Anton, J. Durst, and T. Michel Physikalisches Institut Abt. IV, Erlangen
The major purpose of this communication is to share our experiences on the numerical difficulties we ended up in simulating heating effects of saturable absorbers based on III-V semiconductors with the commercial finite element software... COMSOL Conference 2005, Boston LePaul, S., Yang, N., Aniel, F. Institut d’Electronique Fondamentale, Université Paris XI – CNRS UMR 8622, Orsay
We use the MOS transistor model from COMSOL as a template to do our own model of double gate MOSFET. At the present time, it seems that double gate devices- going to non-planar transistor architectures- could be a solution for sub-32nm... COMSOL Conference 2005, Boston Gidon, S. CEA Grenoble Leti
Infrared photonic detectors operating in the mid infrared region find applications in pollution monitoring, high-speed infrared imaging systems and free space telecommunications. There is a need for new uncooled high performance detector... COMSOL Conference 2005, Boston Cuminal, Y.1, Christol, P.2, Rodriguez, J.B2, Joullié, A.2 1 Laboratoire des Sciences des Matériaux et d’Automatique (LASMEA), Université Clermont II, UMR CNRS 6602, Aubiére, France 2 Centre d’Electronique et de Micro-optoélectronique de Montpellier (CEM2), Université de Montpellier-II, UMR CNRS 5507, Montpellier, France
We present in this paper a model to study new memory devices with embedded nanocrystals, emerging in microelectronics. The theoretical calculations and their implementation in FEMLAB are detailed, leading to a quite simple and realistic... COMSOL Conference 2005, Boston Leroy, Y., Leriche, B., Cordan, A.S. InESS — ENSPS, UMR 7163, ILLKIRCH, France
Electron interferometry using the Aharonov-Bohm (AB) effect finds many applications in industrial areas such as future nanocomputer technologies, physical random number generators, electron phase microscopy and holography, to name just a... COMSOL Conference 2005, Boston Alberty, J.M. EIHES, Ecole d’Ingénieurs de Genève
Generally, the power dissipation in a semiconductor device generates self-heating effect. This effect is very significant in power applications using Gallium Nitride. Taking into account heating effects enables us to understand physical... COMSOL Conference 2005, Boston Benbakhti, B., Rousseau, M., De Jeager, J.C. IEMN-USTL
In recent years, a large variety of high dielectric constant materials has been studied as an alternative to silicon dioxide in order to improve the electrical properties in many integrated devices. The authors pointed out MIM... COMSOL Conference 2005, Boston Gaillard, N., Pinzelli, L., Gros-Jean, M., Bsiesy, A. STMicroelectronics
