Model ID: 114
A semiconductor diode consists of two regions with different doping: a p-type region with a dominant concentration of holes, and an n-type region with a dominant concentration of electrons. The model presented here formulates the problem using three dependent variables: psi (electric potential), n, and p. Even in this model’s simplest form, strong nonlinear dependencies are present.
|With 0.5V forward bias, the holes from the p-type region flow into and through the low doped n-type region without significant recombination. As a result, the hole concentration increases several orders of magnitude in the n-type region.|