Plasma Enhanced Chemical Vapor Deposition (PECVD)
Model ID: 12393
This model simulates deposition of silicon onto a wafer using a 95/5 mixture of argon and silane. The plasma chemistry consists of 19 volumetric reactions, 8 surface reactions, 11 volumetric species and 3 surface species. The plasma is highly electronegative due to the presence of SiH4- ions.
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Mole fraction of Silane in the reactor after 60s. |
