Optimization of SPICE Parameter Extraction for a Semiconductor Diode
In the design of a semiconductor device, it is often required to develop a compact model for use when analyzing its behavior in larger systems. SPICE models are compact descriptions of electronic circuits, where a set of SPICE parameters determines the device’s behavior in static, transient, and time-harmonic analysis.In developing such a compact model, the extraction of the SPICE parameters usually requires several different characteristics that show how the device behaves for a range of operating conditions. The characteristics can either be the result of measurements or come from simulations of a more-detailed reference model.
This example reviews the development of a compact model for a semiconductor diode. The reference finite-element model is the Semiconductor Diode model (bias 0.5 V) in the COMSOL Multiphysics Model Library. From this model it is possible to extract the forward characteristics where the diode is biased from 0 V up to 1.5 V in the Optimization Lab.
Six SPICE parameters control the forward characteristics of the compact model. This sets a lower limit on the number of reference data required to extract the compact model.
| Collage showing the hole concentration (left) and the characteristics from both the semiconductor diode and the equivalent circuit in the same figure (right). |
Engineering Fields
- Optimization
- Semiconductor Applications
Application Areas
- Optimization
- Semiconductor Devices