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Model ID: 249

Boat Reactor for Low Pressure Chemical Vapor Deposition

Chemical vapor deposition (CVD) is an important step in the process of manufacturing microchips. One of the common applications is the deposition of silicon on wafers at low pressure. Low pressure reactors are used to get a high diffusivity of the gaseous species, which results in a uniform deposition thickness, since the process becomes limited by the deposition kinetics.

The goal of this simulation is to describe the rate of deposition as a function of the fluid mechanics and kinetics in such a system. In the model, the momentum and mass transport coupled to reaction kinetics for a deposition process is performed.

Silane enters the reactor and reacts on a series of wafers to form hydrogen and silicon. The remaining mixture leaves the reactor at the outlet. The deposition of silicon, on the surface of the wafers, depends on the local concentration of silane, which is determined by the operational conditions of the reactor. Transport within the wafer bank is simulated through using anisotropic diffusion coefficients, to nullify diffusion in the direction perpendicular to the wafers. The convection is also nullified in this domain.

This simulation describes the rate of silicon deposition on wafers as a function of the fluid mechanics and kinetics in CVD reactor. Transport within the wafer bank is simulated through using anisotropic diffusion coefficients, to nullify diffusion in the direction perpendicular to the wafers.

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