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Model ID: 504

Rapid Thermal Annealing in the Semiconductor Manufacturing Industry

In semiconductor production thermal annealing is an important process step. The doped silicon wafer is rapidly heated to 1000 degrees C during ten seconds. An indirect iR-lamp is used to heat the wafer. The temperature of the wafer is detemined with an indirect sensor, based on the radiation emitted by the wafer.

In this example, the transient heat transfer and radiation of the lamp, wafer and sensor, is modeled by using the General Heat Transfer application mode. The results show the transient temperature distribution and the radiative fluxes. The responce of the sensor is determined.

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