Chemical Vapor Deposition of GaAs
Chemical vapor deposition (CVD) allows a thin film to be grown on a substrate through molecules and molecular fragments adsorbing and reacting on a surface.This example illustrates the modeling of such a CVD reactor where triethyl-gallium first decomposes, and the reaction products along with arsine (AsH3) adsorb and react on a substrate to form GaAs layers.
The CVD system is modeled using momentum, energy, and mass balances including a detailed description of the gas phase and adsorption kinetics.
Firstly, a reduced reaction scheme is compared to the full scheme in the COMSOL Reaction Engineering Lab. In this tool, it is easy to study different models by effortlessly activating and deactivating reactions.
Then, the reduced scheme described in the Reaction Engineering Lab is exported to the Chemical Engineering Module in COMSOL Multiphysics for the simulation of the complex reaction/transport mechanisms in a detailed reactor geometry.
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The modeling of a CVD reactor with homogeneous, absorption, desorption and surface reactions is investigated. The reaction mechanism is then coupled to the transport mechanisms in a detailed reactor geometry |
Engineering Fields
- Reaction Engineering
Application Areas
- Semiconductor Devices
- Chemical Reaction Engineering