Chemical Vapor Deposition of GaAs
Model ID: 945
Chemical vapor deposition (CVD) allows a thin film to be grown on a substrate through molecules and molecular fragments adsorbing and reacting on a surface. This example illustrates the modeling of such a CVD reactor where triethyl-gallium first decomposes, and the reaction products along with arsine (AsH3) adsorb and react on a substrate to form GaAs layers.
The CVD system is modeled using momentum, energy, and mass balances including a detailed description of the gas phase and adsorption kinetics. Firstly, a reduced reaction scheme is compared to the full scheme in the COMSOL Reaction Engineering Lab. In this tool, it is easy to study different models by effortlessly activating and deactivating reactions.
|SEMICONDUCTOR MANUFACTURING: The modeling of a CVD reactor with homogeneous, absorption, desorption and surface reactions is investigated. The reaction mechanism is then coupled to the transport mechanisms in a detailed reactor geometry.|