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Model ID: 972

RF-Heated Hot Wall Furnace for Semiconductor Processing

Furnace reactors are used in the fabrication of semiconductor industry to grow layers on the wafers. These can also be used for epitaxial growth, which is a key technology for fabrication of electrical devices.

For the wide band gap silicon carbide substance growth takes place in graphite susceptors at very high temperatures (~2000 ^oC). The susceptors are heated with radio frequency (RF) coils, using power levels in the 10 kW range. The design of the chamber is crucial to reach a uniform temperature, efficient heating, and control of high temperature regions.

This model shows a simple furnace design that heats a susceptor of graphite, using an 8 kW RF signal at 20 kHz. The temperature distribution over the wafer is extracted, as well as the temperature on the outer Quartz tube. At these high temperature the heat flux is dominated by radiation.

Using a 8 kW RF signal at 20 kHz a susceptor of graphite is heated to 2000 degrees Celcuis. The model shows the temperature distribution inside the susceptor and on the quartz tube. The heat flux is dominated by radiation.

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