May 27, 2021 9:45 a.m.–4:30 p.m. CEST

Back to Events Calendar

COMSOL Day: Semiconductor Technology

See what is possible with multiphysics simulation

COMSOL Day: Semiconductor Technology will explore the use of simulation within the semiconductor industry for manufacturing semiconductor-based devices and the components used to support them, as well as the physical characteristics of the devices themselves.

Topics will include the analysis of vacuum systems; the physics of semiconductor devices; wave, ray, and charged particle optics; plasma reactors; the modeling of chemical reaction kinetics; and more.

The sessions will focus on modeling techniques in the respective application areas, and you will learn about features in COMSOL Multiphysics® and best practices from COMSOL engineers and developers. Keynote speakers from industries based on or reliant on such devices will provide their perspective on the importance of simulation to these applications.

View the schedule below and register for free today.



Please join us 10 minutes before the presentation starts to settle in and make sure that your audio and visual capabilities are working.


To start, we will briefly discuss the format of the day and go over the logistics for using GoToWebinar.


Current modeling and simulation of semiconductor devices, their manufacture, and the components and infrastructure surrounding them has become more complex due to a number of factors, such as the reduction in the size of semiconductor devices, the general competitiveness of the industry, and requirements for increasing their performance.

The ability to accurately model these devices and associated manufacturing technology increasingly requires a multiphysics approach to define and analyze their physical aspects. Example questions include:

  • Does my system stay within the allowed temperature bandwidth?
  • Does fluid–structure interaction play a role?
  • Why does my plasma leave an unwanted coating on the walls?

During this session, the latest trends in modeling various aspects of semiconductor device technology and manufacture will be discussed. You will also learn how simulation specialists make their high-fidelity models available as easy-to-use applications for colleagues or customers.


Emilio Bajonero Canonico, ASML

In EUV photolithography machines, the thermal gradients that arise during operation can result in performance hits that drift over time. Finite element modeling of components and systems helps steer our design in order to minimize risks and meet specifications. However, there is always a gap between the modeling and the architecture team, and some information on sensitivities or the feel of the system can be lost in the discussion. The Application Builder in COMSOL Multiphysics® is a great way to bridge this gap, give agency to the end user of the simulation results, and increase the influence that FEM analysts can have on their projects.

Parallel Session
Chemical Reactions in Semiconductor Manufacture

Semiconductor manufacturing processes such as CVD and etching largely rely on chemical, surface–chemical, and electrochemical reaction kinetics and transport processes. In this session, we will demonstrate how COMSOL Multiphysics® and the Chemical Reaction Engineering and Electrochemistry modules are typically used to accurately develop, analyze, and optimize these types of processes and the equipment where they are controlled. We will look at how the reaction kinetics can be appropriately manipulated on the fly, and how these relate to heat, material, and flow transport processes that are inherent to semiconductor fabrication and related manufacturing.

Modeling of Thermal Stresses

Taking into consideration and analyzing thermal stresses in product design, development, and optimization within semiconductor device manufacturing and application is critical for efficient time-to-market competitiveness and product quality control.

This session will cover and discuss different aspects of thermomechanical analysis, such as defining thermal expansion input parameters and temperature-dependent nonlinear material effects, and how they are easily simulated in COMSOL Multiphysics®. We will also discuss the importance of integrating thermomechanical modeling analysis early in semiconductor device product design.

Break for Lunch

Gudrun Kissinger & Costanza Lucia Manganelli, IHP: Leibniz Institute for High Performance Microelectronics

Here, we present two examples demonstrating a small part of the broad variety of possible applications of COMSOL Multiphysics® in semiconductor materials research.

Crystal defects and metallic impurities are known to degrade or destroy the performance of electronic devices. However, crystal defects, especially oxide precipitates, placed in regions away from the active devices, can improve device characteristics by gettering unintentional metallic contamination. Precipitation of oxygen in silicon can be controlled via intrinsic point defects, the vacancies, and self-interstitials. In this presentation, we demonstrate a time-dependent thermomechanical model combined with equations describing the behavior of intrinsic point defects and investigate the impact of flash lamp annealing, generating high temperatures up to the melting point of silicon in just a few milliseconds, on point defect generation and mechanical deformation in a silicon substrate.

In the second part of the presentation, we investigate the influence of the thermomechanical aspects on the optical properties of Ge microstructures. Finite element method (FEM) calculations obtained with COMSOL Multiphysics® allow a complete spatial assessment of mechanical deformations induced by a stressor layer deposited on Ge micropillars. Simulated strain maps are in excellent agreement with experimental maps obtained by Raman spectroscopy in our institute. The theoretical investigation on strain-dependent band structure, obtained by means of coupling the Structural Mechanics and Semiconductor modules, together with the presence of strain gradient along the longitudinal direction, is exploited to fully capture photoluminescence spectroscopy experiments. In perspective, our comprehensive approach can be applied to the design and characterization of strain-based electronic and opto-electronic devices.

Parallel Session
Vacuum System Simulations

Vacuum technology plays an important role in semiconductor device and MEMS fabrication. When simulating such, the almost-vacuum gas environment inside the fabrication chamber requires a different approach to traditional CFD simulation methods based on the Navier–Stokes equations.

In this session, we will introduce the Molecular Flow Module, which provides dedicated functionality for modeling highly rarefied gas flows. In addition, we will also explore how such simulations may also take into account other coupled physics through use of the COMSOL Multiphysics® suite of physics interfaces.

Wave and Ray Optics

Solar cells and photodiodes are examples of semiconductor devices that receive or emit light over different scales within the electromagnetic spectrum. In this session, we will cover the modeling of electromagnetic wave propagation with direct discretization of Maxwell's equations using the Wave Optics Module and ray tracing with the Ray Optics Module.

Both can be used to couple the analysis of electromagnetic wave propagation with each other, and with other physical phenomena. We will look at the capabilities of each module, and discuss which one to choose (or maybe both) for modeling the interaction of light phenomena with your semiconductor devices.


Olga Cueto, CEA-Leti

Phase change memory (PCM) is among the most promising of innovative nonvolatile memory technologies. In PCM, each bit of information is stored in a small portion of a phase change material, which can exist in two different solid states: crystalline and amorphous. The memory effect results from the contrast in the electrical resistivity of the two phases. The Ge2Sb2Te5 (GST) alloy, originally studied for optical disk applications, is among the most popular materials for PCM devices. In PCM devices, the switching between the two states is accomplished by localized heating of the material prompted by an electric current (Joule effect). PCM has entered the market addressing storage class memory (SCM) applications and it is in sampling within microcontrollers for automotive applications. PCM cell architecture and material composition engineering is still necessary in order to improve electrical performances tailored to specific applications. LETI has been developing a strong expertise in PCM material science working with academic partners (CNRS-Ecole Polytechnique, Université Grenoble Alpes, CEMES, IM2NP, Université de Lyon, Université de Bordeaux, Université de Liège) and industrial companies (STMicroelectronics and Applied Materials). In this presentation, we will use two simulation projects relying on COMSOL Multiphysics® to illustrate the work we realized to support technological development and help understanding complex phase change mechanisms in GST alloys.

Parallel Session
Plasma Reactors for Material Processing

Plasmas are used in surface processing during many applications or steps of semiconductor fabrication. In this session, we will introduce the Plasma Module and its capabilities to model plasma reactors used in the semiconductor industry. You will learn how to set up models for inductively coupled plasma and capacitively coupled plasma reactors.

Charged Particle Optics

Charged particle acceleration is a key phenomenon in application areas such as etching and mass spectrometry. In this session, we will introduce the Particle Tracing Module for ion and electron optics simulation. You will learn how to set up one-way and two-way coupled models of the propagation of charged particles through electric and magnetic fields. You will also learn how to set up a Monte Carlo model of the collisions between charged particles and molecules in their ambient surroundings.

Parallel Session
Semiconductor Device Physics

In this session, we will introduce, summarize different features, and demonstrate how to model semiconductor devices using the Semiconductor Module. The Semiconductor Module provides dedicated tools for the analysis of semiconductor device operation at the fundamental physics level.

Made up of different interfaces, the Semiconductor interface is based on the drift diffusion equations, with the optional density-gradient contribution for quantum confinement effects. It is useful for simulating practical devices such as bipolar transistors, MESFETs, MOSFETs, IGBTs, ISFETs, Schottky diodes, solar cells, photodiodes, and LEDs.

The Schrödinger Equation and Schrödinger–Poisson interfaces are useful for the modeling of quantum-confined systems such as superlattices, quantum wells, quantum wires, and quantum dots. They can also be used to simulate general quantum systems, such as a Bose–Einstein condensate and its vortex lattice formation.

COMSOL engineers and developers will run the session, and you will be able to ask questions.

Introduction to Surface-to-Surface Radiation Modeling

Radiation is key for high-fidelity modeling of many manufacturing, treatment, and process applications involving heat transfer. In this session, we demonstrate how this can be achieved using COMSOL Multiphysics®. In particular, we will hone in on one of the heat transfer physics interfaces that is specific for surface-to-surface radiation, and where you can model the radiative spectrum for separate bands and account for reflective surface behavior.

Concluding Remarks

COMSOL Speakers

Ruud Börger
Ruud Börger is an account manager at COMSOL Benelux. Before joining COMSOL in 2010, he earned an MS degree in physics and started his career at Philips. He has extensive knowledge on fluid dynamics, heat transfer, and electromagnetics.
Frank de Pont
Technical Manager
Frank de Pont has been with COMSOL since 2005 and currently works as technical manager for the Benelux office. Before joining COMSOL, he worked as a structural analysis consultant. He received his MSc degree in mechanical engineering from Twente University, Enschede.
Paul Salden
Applications Engineer
Paul Salden joined the COMSOL Benelux office in 2018, where he works as an applications engineer. He received an MSc degree in aerospace engineering from TU Delft, specializing in structural mechanics. Before joining COMSOL, Paul worked as a data analysis consultant.
Sander Bezuijen
Applications Engineer
Sander Bezuijen is an applications engineer at COMSOL, where he specializes in fluid dynamics. Before joining COMSOL in 2017, he studied mechanical engineering at Delft University of Technology.
Christopher Boucher
Technical Product Manager
Chris Boucher is the technical product manager for the Particle Tracing Module, Ray Optics Module, and Molecular Flow Module. He received his BS degree in aerospace engineering and physics from Worcester Polytechnic Institute (WPI) before joining COMSOL in 2012.
Linus Andersson
Technical Support Manager
Linus Andersson is an applications engineer providing technical support within COMSOL and to customers worldwide, specializing in electromagnetic and acoustic simulations. Linus joined COMSOL in 2003, after receiving his MS degree in engineering physics at the Royal Institute of Technology in Stockholm, and completing his diploma thesis at CERN.
Nathaniel Davies
Applications Engineer
Nathaniel Davies joined COMSOL in early 2020 as an applications engineer specializing in electromagnetism. He studied at Oxford University, completing an undergraduate degree and PhD in condensed matter physics with a research specialism in novel magnetic and superconducting materials.
Jose Gregorio
Technical Product Manager
Jose Gregorio is the technical product manager for the Plasma Module. He received his PhD in plasma physics from the University of Paris XI. Before joining COMSOL, Jose was a postdoctoral fellow at LAPLACE laboratory and Tufts University doing research in microplasmas and nanosecond pulsed discharges.

Join COMSOL Day: Semiconductor Technology

This event has ended. Visit the event calendar to view upcoming events.

COMSOL Day Details


This event will take place online.

Local Start Time:
May 27, 2021 | 9:45 a.m. CEST (UTC+02:00)
My Start Time:
Select time zone below:

Invited Speakers

Emilio Bajonero

Emilio Bajonero was born in Queretaro, Mexico. He completed a bachelors in physics and moved to the Netherlands to study masters in thermofluids engineering from TU/e. Since 2016, he has been working at ASML as part of the Thermal Architecture group, focusing on the current generation of EUV lithography scanners.

Costanza L. Manganelli

Costanza L. Manganelli is a researcher at IHP – Leibniz Institute for High Performance Microelectronics. She received her PhD in photonic technology at Scuola Superiore Sant’Anna, Pisa, Italy. She is working on theoretical analysis of optical properties and nonlinearities of strained semiconductors for optoelectronic applications. In her simulations, she focuses on mechanical deformation and its impact on band structure and radiative recombination rate.

Gudrun Kissinger

Gudrun Kissinger is project manager at IHP – Leibniz Institute for High Performance Microelectronics. She is working in the fields of defect engineering and gettering metallic impurities in silicon devices on projects within the wafer manufacturing industry. In her simulation models, she is focused on the impact of thermal processing on the control of extended defects and defects down to the atomic level. Gudrun received her PhD in crystallography from the University of Leipzig.

Olga Cueto

Olga Cueto graduated from “Ecole des Ponts Paris Tech” in Paris in 1991, with a specialization in computer science and applied mathematics. In 1991, she joined CEA Grenoble to work in computational fluid dynamics applied to muclear reactor thermohydraulics. In 2001, she moved to CEA LETI, where she has been working in scientific computing applied to several fields in microelectronics: electromagnetism; process simulation; and, more recently, the simulation of phase change memories (PCM) in collaboration with STMicroelectronics. Since 2017, she has been working with PhD students in collaboration with LPMC (CNRS & Ecole Polytechnique) and STMicroelectronics on the development of a model dedicated to complex phase changes in GeSbTe alloys relying on the phase field method. She is the author or coauthor of 55 articles in the field of microelectronics, including 20 in the field of emerging resistive memories (PCM, OXRAM, CBRAM).