Simulation of Current Density for Electroplating on Silicon Using a Hull Cell
F. Lima1 U. Mescheder1 H. Reinecke3
1Hochschule Furtwangen University, Furtwangen, Baden-Wuerttemberg, Germany
3Institut für Mikrosystemtechnik, Freiburg im Breisgau, Baden-Wuerttemberg, Germany
Electrodeposition has a major advantage over other methods of thin film deposition. It allows deposition at atmospheric pressure and room temperature, requiring inexpensive equipment. However, there are several parameters which can influence an electroplated metal layer quality. The current density distribution is taken into consideration.
The Hull cell is an electrodeposition tank with a cathode angled with respect to the anode. Therefore, the current density varies along the cathode surface and it is possible to obtain an optimal plating distance for certain parameters.
A sample holder was built to allow experiments with this type of cathode in the Hull cell. The setup was tested and simulated for the Hull Cell. A modified Hull cell design is suggested for further experiments.