The Application Gallery features COMSOL Multiphysics® tutorial and demo app files pertinent to the electrical, structural, acoustics, fluid, heat, and chemical disciplines. You can use these examples as a starting point for your own simulation work by downloading the tutorial model or demo app file and its accompanying instructions.
Search for tutorials and apps relevant to your area of expertise via the Quick Search feature. Note that many of the examples featured here can also be accessed via the Application Libraries that are built into the COMSOL Multiphysics® software and available from the File menu.
The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both ... Read More
MOSFETs typically operate in three regimes depending on the drain-source voltage for a given gate voltage. Initially the current-voltage relation is linear, this is the Ohmic region. As the drain-source voltage increases the extracted current begins to saturate, this is the saturation ... Read More
This tutorial analyzes the hysteresis of the conductance-gate-voltage (G-Vg) curves of an InAs nanowire FET, using the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without a large increase of computational costs. The ... Read More
Schottky Contact This benchmark simulates the behavior of an ideal Schottky barrier diode made of a tungsten contact deposited on a silicon wafer. The resulting J-V (current density vs. applied voltage) curve obtained from the model under forward bias is compared with experimental ... Read More
This tutorial model solves the Gross–Pitaevskii Equation for the vortex lattice formation in a rotating Bose–Einstein condensate bound by a harmonic trap. The equation is essentially a nonlinear single-particle Schrödinger Equation, with the inter-particle interaction represented by a ... Read More
This 3D model of a nanowire MOSFET employs the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without requiring excessively high computational costs. The oxide layer is simulated explicitly with geometric domains, and ... Read More
This tutorial simulates the turn-off transient (reverse recovery) of a simple PIN diode with an inductive load, loosely based on the book "Fundamentals of Power Semiconductor Devices" by B. J. Baliga (p. 256, 2008 edition). Unlike the book, which assumes an initial constant current ramp ... Read More
The double barrier structure is of interest because of its application in semiconductor devices such as resonant-tunneling diodes. This verification example demonstrates the Schrödinger Equation interface to set up a simple 1D GaAs/AlGaAs double barrier structure to analyze the ... Read More
This model shows how to compute the AC characteristics of a MOSFET. Both the output conductance and the transconductance are computed as a function of the drain current. Read More
Surface acoustic phonons and surface roughness have an important effect on the carrier mobility, especially in the thin inversion layer under the gate in MOSFETs. The Lombardi surface mobility model adds surface scattering resulting from these effects to an existing mobility model using ... Read More