Finite Element Analysis of Integrated Circuit Interconnect Lines on Lossy Silicon Substrate

S. Musa[1], M. Sadiku[1], and A. Emam[2]

[1]Roy G. Perry College of Engineering, Prairie View A&M University, Prairie View, TX
[2]Information Systems Department, King Saud University, Riyadh, Saudi Arabia

The silicon substrate has a significant effect on the inductance parameter of a lossy interconnect line on an integrated circuit. It is essential to take this into account in determining the transmission line electrical parameters.

In this paper, a new quasi-TEM capacitance and inductance analysis of multiconductor multilayer interconnects is successfully demonstrated using the finite element method (FEM). We specifically illustrate the electrostatic modeling of single and coupled interconnected lines on a silicon-silicon oxide substrate. Also, we determine the quasi-static spectral for the potential distribution of the silicon-integrated circuit.

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