Surface Chemistry Tutorial
Model ID: 9663
Surface chemistry is often the most important and most overlooked aspect of reacting flow modeling. Surface rate expressions can be hard to find or not even exist at all. Often it is preferable to use sticking coefficients to describe surface reactions because they can be estimated intuitively.
The tutorial model simulates outgassing from a wafer during a chemical vapor deposition (CVD) process. Careful attention is paid to the averall mass balance in the system and the difference between the mass averaged velocity and diffusion velocity is explored.
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Plot of the growth height (surface and z-axis) vs. the wafer arc length (x-axis) and time (y-axis). The final height of deposited silicon is 158 Angstroms. |
