The Application Gallery features COMSOL Multiphysics® tutorial and demo app files pertinent to the electrical, structural, acoustics, fluid, heat, and chemical disciplines. You can use these examples as a starting point for your own simulation work by downloading the tutorial model or demo app file and its accompanying instructions.
Search for tutorials and apps relevant to your area of expertise via the Quick Search feature. Note that many of the examples featured here can also be accessed via the Application Libraries that are built into the COMSOL Multiphysics® software and available from the File menu.
This model shows how to model the avalanche breakdown due to the impact ionization in a Silicon Carbide diode. The current-voltage (I-V) characteristics of the device are presented as well as the electric field distribution plot. Furthermore, the carrier generation term has been computed ... Read More
This model computes the input impedance/admittance to an acoustic system in the frequency domain. The system here represents a typical measurement setup used for testing hearing aids and includes domains with thermoviscous boundary layer losses. The input admittance, computed in the ... Read More
This model shows how to model a simple Shockley diode— a four-layer PNPN semiconductor device. The Shockley diode is also named as thyristor. In this model, the Analytic Doping Model node is utilized to define the doping profiles for each domain. A time-dependent study is employed to ... Read More
When a droplet is placed on a substrate on which surface acoustic waves (SAWs) are traveling, the energy of the SAWs is transferred into the droplet to form an acoustic field. The transferred energy is attenuated and generates a streaming flow. This type of streaming enables contactless ... Read More
This example shows how to model a FinFET in 3D. The I-V characteristics of the device are simulated. First, the gate voltage is swept to obtain the drain current versus gate voltage plot. Then, the drain current versus drain voltage characteristics are computed for fixed gate voltages. Read More
In this example, the dynamics of a hopping hoop is simulated. A rigid rolling ring with a point mass on the perimeter can, under certain conditions, jump up from the surface on which it is rolling. The effects of different parameters like initial velocity and friction are explored. You ... Read More
In a diode or a transistor, when a p-n junction is reverse-biased (the p-side is connected to a lower potential than the n-side), ideally, no current should flow. However, due to minority carriers (electrons in the p-side and holes in the n-side), a small current, known as the reverse ... Read More
A tube connection consisting of a flange with eight prestressed bolts is subjected to a set of loads: an internal pressure, an axial force, and an external bending moment. Due to two symmetry planes, it is sufficient to only consider one quarter of the full geometry. The study ... Read More
This example is an adaptation of our DC Characteristics of a MOS Transistor (MOSFET) model where the metal and dielectric domains are modeled explicitly and not via a boundary condition. Therefore, the potential profile inside the metal and the insulator can be observed. Read More
This model simulates an LED that emits in the infrared part of the electromagnetic spectrum. The device structure is made up of a single p-n junction formed by a layer of p-type doping near the top surface of an otherwise n-type wafer. This kind of device geometry is simple and cheap to ... Read More