Multiphysics Modeling of Semiconductors, Part 2: Device Physics

Semiconductor device simulation can be used to analyze carrier transport, quantum effects, and multiphysics interactions in advanced electronic and optoelectronic devices. In this webinar, we will introduce the Semiconductor Module, an add-on to the COMSOL Multiphysics® software, that provides dedicated features for the analysis of semiconductor device operation at the fundamental physics level.

This module includes functionality based on the drift-diffusion equations, with the optional density-gradient contribution for quantum confinement effects. It is useful for simulating a range of conventional and emerging devices, including bipolar transistors, metal–oxide–semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistors (IGBTs), organic field-effect transistors (OFETs), LEDs, memristors, and more. Thermal effects, optical transitions, and other multiphysics effects available in the module can be readily added to a model.

Additional capabilities featuring the Schrödinger and Schrödinger-Poisson equations can be used for modeling quantum-confined systems such as superlattices, quantum wells, quantum wires, and quantum dots, as well as Bose–Einstein condensates and vortex lattice formation.

This is the second webinar in a three-part series showcasing the capabilities of COMSOL Multiphysics® relevant to the semiconductor industry.