Molecular Flow in an Ion-Implant Vacuum System

Application ID: 10011

Ion implantation is used extensively in the semiconductor industry to implant dopants into wafers. Within an ion implanter, ions generated within an ion source are accelerated by an electric field to achieve the desired implant energy. Ions of the correct charge state are selected by means of a separation magnet, which bends the ion beam to ensure that ions of a particular charge-to-mass ratio are the only ones that reach the wafer. The energy dose and angle of the ion beam are both key parameters for the process.

This example shows how to model an ion implantation system using the Molecular Flow interface.

This model example illustrates applications of this type that would nominally be built using the following products: