Radiation Effects in a PIN Diode
Application ID: 74891
This tutorial performs steady-state and transient analysis of the response of a PIN diode to constant and pulsed radiation, respectively. The effect of radiation is modeled as spatially uniform generation of electron-hole pairs within the device. At high dose rates the separation of the generated charges causes the reduction of the interior electric field and prolonged storage of excess carriers. A quantitative prediction of this phenomenon is only possible with numerical simulation, since analytical solution is unattainable. Several techniques for achieving convergence in the cases of high reverse bias, field-dependent mobility, and time-dependent studies are demonstrated. The computed carrier concentrations and electric field distribution agree well with the reference paper.
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