3D Density-Gradient Simulation of a Nanowire MOSFET
Application ID: 73771
This 3D model of a nanowire MOSFET employs the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without requiring excessively high computational costs. The oxide layer is simulated explicitly with geometric domains, and quantum confinement at the silicon-oxide interface is accounted for via a dedicated boundary condition. The density-gradient effective mass is anisotropic. Various selection utilities are used to simplify the assignment of physics settings and plot selections. The result matches well with the Id-Vg curves and electron density profiles published in the reference paper.
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however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Specification Chart and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.