Breakdown in a MOSFET
Application ID: 15583
MOSFETs typically operate in three regimes depending on the drain-source voltage for a given gate voltage. Initially the current-voltage relation is linear, this is the Ohmic region. As the drain-source voltage increases the extracted current begins to saturate, this is the saturation region. As the drain-source voltage is further increased the breakdown region is entered, where the current increases exponentially for a small increase in the applied voltage. This is due to impact ionization.
This model shows how to use the time dependent solver to model impact ionization in a MOSFET.
This model is included as an example in the following products:Semiconductor Module
however additional products may be needed to reproduce it. This example may be created and run using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Specification Chart and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.