DC Characteristics of a MESFET

Application ID: 14999

In a MESFET, the gate forms a rectifying junction that controls the opening of the channel by varying the depletion width of the junction.

In this model we simulate the response of a n-doped GaAs MESFET to different drain and gate voltages. For a n-doped material the electron concentration is expected to be orders of magnitude larger than the hole concentration. Accordingly, it is possible to use the majority carrier option to compute an accurate solution with less degrees of freedom then it would normally be needed using the electrons and holes formulation.

The agreement between the two methods is excellent, but the majority carrier formulation solves twice as fast.

This model example illustrates applications of this type that would nominally be built using the following products: