Density-Gradient Analysis of an InSb p-Channel FET

Application ID: 73551

This tutorial analyzes the DC characteristics of an InSb p-Channel FET, using the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without a large increase of computational resources. The confinement effect is applied both in the quantum well channel and on the top insulator interface, which is close to the channel. The use of an anisotropic density-gradient effective mass matrix is demonstrated, so is the technique to configure a general field-dependent mobility model. The hole density profile and the Id-Vg curve obtained from the 2D model compare well with the published figures in the reference paper.

This model example illustrates applications of this type that would nominally be built using the following products: