Electrolyte-Gated Organic Field-Effect Transistor

Application ID: 119061

This model shows how to model an electrolyte-gated organic field-effect transistor based on a general drift-diffusion model. The model uses the Stabilized Convection-Diffusion Equation interface and the Electrostatics interface. The transistor characteristics are visualized. Formation of the EDLs in the simulated device demonstrates the key feature of EGOFETs.

This model example illustrates applications of this type that would nominally be built using the following products: