Application ID: 14617
This one-dimensional model simulates three different heterojunction configurations under forward and reverse bias. The model shows the difference in using the continuous quasi-Fermi levels model as opposed to the thermionic emission model to determine the current transfer occurring between the different materials creating the junction under bias. The energy levels obtained with the model are then compared between each configuration in order to emphasize the origin of the current transfers, that is, whether it is primarily from holes in the valence band or from electrons in the conduction band. The J-V curves (current density vs. applied voltage) obtained from each simulation are compared with results obtained from the specialized literature.
This application was built using the following:Semiconductor Module
The combination of COMSOL® products required to model your application depends on the physics interfaces that define it. Particular physics interfaces may be common to several products (see the Specification Chart for more details). To determine the right combination of products for your project, you should evaluate all of your needs in light of each product's capabilities, consultation with the COMSOL Sales and Support teams, and the use of an evaluation license.