Application ID: 47551

The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both the low-frequency and the high-frequency C-V curves are computed.

This model example illustrates applications of this type that would nominally be built using the following products: