Vacancy Electromigration in IC Interconnect Lines

Application ID: 113951

As integrated circuit (IC) technology advances, with circuits becoming more powerful and compact, it is increasingly important to identify and prevent any cause of circuit failure.

One particularly critical factor contributing to circuit failure is electromigration within the interconnects, stemming from the accumulation of vacancies within the metal.

Electromigration denotes the migration of vacancies within the metal, driven by electric fields, concentration, hydrostatic stress, and temperature gradients. This example illustrates how this highly coupled phenomenon can be modeled and analyzed in COMSOL Multiphysics.

This model example illustrates applications of this type that would nominally be built using the following products: