Discussion Closed This discussion was created more than 6 months ago and has been closed. To start a new discussion with a link back to this one, click here.

Question regarding Tunnel Diodes (Esaki Diode) simulation

Please login with a confirmed email address before reporting spam


I have been trying to simulate a p++/n++ silicon tunnel diode for quite some time now without success, I always get the regular p-n diode I-V characteristics. In the COMSOL documentation there are only explanations for tunneling across an oxide layer. But, nothing on tunneling through potential barrier formed by the depletion layer.

Does the build-in semiconductor module including the band to band tunneling?

Best regards

0 Replies Last Post Mar 13, 2017, 10:09 AM EDT
COMSOL Moderator

Hello Max Chen

Your Discussion has gone 30 days without a reply. If you still need help with COMSOL and have an on-subscription license, please visit our Support Center for help.

If you do not hold an on-subscription license, you may find an answer in another Discussion or in the Knowledge Base.

Note that while COMSOL employees may participate in the discussion forum, COMSOL® software users who are on-subscription should submit their questions via the Support Center for a more comprehensive response from the Technical Support team.