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Question regarding Tunnel Diodes (Esaki Diode) simulation


I have been trying to simulate a p++/n++ silicon tunnel diode for quite some time now without success, I always get the regular p-n diode I-V characteristics. In the COMSOL documentation there are only explanations for tunneling across an oxide layer. But, nothing on tunneling through potential barrier formed by the depletion layer.

Does the build-in semiconductor module including the band to band tunneling?

Best regards

0 Replies Last Post Mar 13, 2017, 10:09 AM EDT
COMSOL Moderator

Hello Max Chen

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