Trench-Gate IGBT 2D

Application ID: 101321

In this first half of a two-part example, a 2D model of a trench-gate IGBT is built, which will be extended to 3D in the second half. In general, it is the most efficient to start with a 2D model to make sure everything works as expected, before extending it to 3D. The Caughey–Thomas mobility model is combined with the Klaassen unified mobility model to account for velocity saturation and phonon, impurity, and carrier–carrier scattering. The contact resistance option of metal contact boundary conditions is used to implement the mixed-mode simulation with parasitic resistance at the collector and emitter as mentioned in the reference paper. The computed collector current density as a function of the collector voltage agrees reasonably well with the published result.

This model example illustrates applications of this type that would nominally be built using the following products: