Trench-Gate IGBT 2D

Application ID: 101321

In this first half of a two-part example, a 2D model of a trench-gate IGBT is built, which will be extended to 3D in the second half. In general, it is the most efficient to start with a 2D model to make sure everything works as expected, before extending it to 3D. The Caughey-Thomas mobility model is combined with the Klaassen unified mobility model to account for velocity saturation and phonon, impurity, and carrier-carrier scattering. The contact resistance option of metal contact boundary conditions is used to implement the mixed-mode simulation with parasitic resistance at the collector and emitter as mentioned in the reference paper. The computed collector current density as a function of the collector voltage agrees reasonably well with the published result.

This model example illustrates applications of this type that would nominally be built using the following products: