Trench-Gate IGBT 3D

Application ID: 101501

In this second half of a two-part example, a 3D model of a trench-gate IGBT is built by extruding the 2D model from the first half. Unlike the 2D model, now it is possible to arrange the alternating n+ and p+ emitters along the direction of extrusion as in the real device. This more realistic arrangement leads to better quantitative agreement with experimental data. The computed collector current density as a function of the collector voltage agrees reasonably well with the published result.

This model example illustrates applications of this type that would nominally be built using the following products: