The Application Gallery features COMSOL Multiphysics® tutorial and demo app files pertinent to the electrical, structural, acoustics, fluid, heat, and chemical disciplines. You can use these examples as a starting point for your own simulation work by downloading the tutorial model or demo app file and its accompanying instructions.
Search for tutorials and apps relevant to your area of expertise via the Quick Search feature. Note that many of the examples featured here can also be accessed via the Application Libraries that are built into the COMSOL Multiphysics® software and available from the File menu.
This tutorial demonstrates the use of the density-gradient formulation to include the effect of quantum confinement in the device physics simulation of a silicon inversion layer. This formulation requires only a moderate increase of computational resources as compared to the conventional ... Read More
This tutorial analyzes the DC characteristics of an InSb p-Channel FET, using the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without a large increase of computational resources. The confinement effect is applied both ... Read More
This model calculates the DC characteristics of a simple MOSFET. The drain current versus gate voltage characteristics are first computed in order to determine the threshold voltage for the device. Then the drain current vs drain voltage characteristics are computed for several gate ... Read More
This model shows how to set up a 3D simulation of a n-p-n bipolar transistor. It is a 3D version of the device shown in the Bipolar Transistor model, and demonstrates how to extend semiconductor modeling into 3D using COMSOL Multiphysics. As in the 2D version of this model, the device ... Read More
This model simulates an LED that emits in the infrared part of the electromagnetic spectrum. The device structure is made up of a single p-n junction formed by a layer of p-type doping near the top surface of an otherwise n-type wafer. This kind of device geometry is simple and cheap to ... Read More
This simple benchmark model computes the potential and carrier concentrations for a one-dimensional p-n junction using both the finite element and finite volume methods. The results are compared with an equivalent device from the book, "Semiconductor Devices: A Simulation Approach," by ... Read More
This simple model demonstrates how to use the Semiconductor Optoelectronics interfaces to model a simple GaAs PIN diode structure. Both the stimulated and spontaneous emission in the semiconductor are accounted for. The corresponding absorption of the light and the associated change in ... Read More
This benchmark model simulates a GaAs nanowire using the self-consistent Schrödinger-Poisson theory to compute the electron density and the confining potential profiles. The predefined Schrödinger-Poisson multiphysics coupling feature is combined with the dedicated Schrödinger-Poisson ... Read More
For a description of this model, see our accompanying blog post "Can COMSOL Multiphysics® Solve the Hydrogen Atom?". Read More
This tutorial performs steady-state and transient analysis of the response of a PIN diode to constant and pulsed radiation, respectively. The effect of radiation is modeled as spatially uniform generation of electron-hole pairs within the device. At high dose rates the separation of the ... Read More