Calculation of thermal resistance of AlGaN/GaN devices

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Hi, I am trying to calculate the thermal resistance of an AlGaN/GaN based laser device. The sstructure contance n and p waveguides, contacts, cladding and electron blocking layer. The active region is the quantum well (3 QW, each having a thickness of 20 nm). All the layers contains different alloy composition of AlGaN (AlxGa1-xN; x= 0.15-0.72).

In reality, we need to pump 1.5 W of power in the active region. In my simulation I have designed the heat source with the pump power of 10e16 W/m3 (Calculating the volume of the device). And finally I saw a temperature rise of 14K in the quantum well with respect to heat sink. So its giving me a thermal resistance of 9 K/W.

  • Is my way of desiging the heat source is correct?
  • What is the typical vlaue of thermal resistance for this kind of AlGaN/GaN based devices? Thanks!


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