Copper Deposition in a Through-Hole Via

Application ID: 97901

This model demonstrates the "butterfly" filling mechanism for copper electrodeposition in a Through-Hole (TH) via exposed to an electrolyte containing halide-suppressor additives.

The Tertiary Current Distribution, Nernst Planck interface in combination with Deformed Geometry is used to track the moving boundary at the cathode surface. The model accounts for adsorption/desorption of additives using dissolving-depositing species formulation.

The model results show selective copper electrodeposition at the middle of the TH, in order to achieve void-free deposition.

This model example illustrates applications of this type that would nominally be built using the following products: