The Application Gallery features COMSOL Multiphysics® tutorial and demo app files pertinent to the electrical, structural, acoustics, fluid, heat, and chemical disciplines. You can use these examples as a starting point for your own simulation work by downloading the tutorial model or demo app file and its accompanying instructions.

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Bipolar Transistor

This model shows how to set up a simple Bipolar Transistor model. The output current-voltage characteristics in the common-emitter configuration are computed and the common-emitter current gain is determined.

Small Signal Analysis of a MOSFET

This model shows how to compute the AC characteristics of a MOSFET. Both the output conductance and the transconductance are computed as a function of the drain current.

Wavelength Tunable LED

This application computes the emission properties of a AlGaN/InGaN LED. The emission intensity, spectrum, and efficiency are calculated for an applied voltage or as a function of voltage over a selected range. The indium composition in the light-emitting InGaN region can be varied in order to control the emission wavelength. When the emission occurs within the visible spectrum the corresponding ...

Schottky Contact

Schottky Contact This benchmark simulates the behavior of an ideal Schottky barrier diode made of a tungsten contact deposited on a silicon wafer. The resulting J-V (current density vs. applied voltage) curve obtained from the model under forward bias is compared with experimental measurements found in the literature

Simulation of an Ion-sensitive Field-effect Transistor (ISFET)

An ion-sensitive field-effect transistor (ISFET) is constructed by replacing the gate contact of a MOSFET with an electrolyte of interest. The concentration of a specific ionic species in the electrolyte can be determined by measuring the change in the gate voltage due to the interaction between the ions and the gate dielectric. This tutorial of an ISFET pH sensor illustrates the procedure to ...

Thermal Analysis of a Bipolar Transistor

This model demonstrates how to couple the *Semiconductor* interface to the *Heat Transfer in Solids* interface. A thermal analysis is performed on the existing [bipolar transistor model](/model/bipolar-transistor-14615) in the case when the device is operated in the active-forward configuration. The *Semiconductor* interface calculates the carrier dynamics and currents within the device and ...

DC Characteristics of a MESFET

In a MESFET, the gate forms a rectifying junction that controls the opening of the channel by varying the depletion width of the junction. In this model we simulate the response of a n-doped GaAs MESFET to different drain and gate voltages. For a n-doped material the electron concentration is expected to be orders of magnitude larger than the hole concentration. Accordingly, it is possible to ...

Heterojunction 1D

This one-dimensional model simulates three different heterojunction configurations under forward and reverse bias. The model shows the difference in using the continuous quasi-Fermi levels model as opposed to the thermionic emission model to determine the current transfer occurring between the different materials creating the junction under bias. The energy levels obtained with the model are ...

Superlattice Band Gap Tool

The Superlattice Band Gap Tool helps the design of periodic structures made of two alternating semiconductor materials (superlattices). The tool uses the effective mass Schrödinger equation to estimate the electron and hole ground state energy levels in a given superlattice structure. Device engineers can use the tool to quickly compute the effective band gap for a given periodic structure and ...

Surface Trapping in a Silicon Nanowire Gate-All-Around Device

A gate-all-around MOSFET consists of a nanowire with a gate electrode wrapped around the circumference. Since the entire nanowire forms the channel, this configuration provides the best possible electrostatic control of the channel and offers a good candidate for the miniaturization of MOSFETs. This model analyzes a silicon nanowire gate-all-around device, with different trap densities at the ...