The Application Gallery features COMSOL Multiphysics® tutorial and demo app files pertinent to the electrical, structural, acoustics, fluid, heat, and chemical disciplines. You can use these examples as a starting point for your own simulation work by downloading the tutorial model or demo app file and its accompanying instructions.
Search for tutorials and apps relevant to your area of expertise via the Quick Search feature. Note that many of the examples featured here can also be accessed via the Application Libraries that are built into the COMSOL Multiphysics® software and available from the File menu.
The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both ... Read More
This benchmark example builds two models of a cross-bridge Kelvin resistor used for extracting the specific contact resistivity. The first model simulates the system in 3D, using the contact resistance feature built in the Semiconductor interface. The other model is a 2D approximation of ... Read More
This model shows how to compute the AC characteristics of a MOSFET. Both the output conductance and the transconductance are computed as a function of the drain current. Read More
This tutorial model solves the Gross–Pitaevskii Equation for the vortex lattice formation in a rotating Bose–Einstein condensate bound by a harmonic trap. The equation is essentially a nonlinear single-particle Schrödinger Equation, with the inter-particle interaction represented by a ... Read More
The double barrier structure is of interest because of its application in semiconductor devices such as resonant-tunneling diodes. This verification example demonstrates the Schrödinger Equation interface to set up a simple 1D GaAs/AlGaAs double barrier structure to analyze the ... Read More
In this second half of a two-part example, a 3D model of a trench-gate IGBT is built by extruding the 2D model from the first half. Unlike the 2D model, now it is possible to arrange the alternating n+ and p+ emitters along the direction of extrusion as in the real device. This more ... Read More
A gate-all-around MOSFET consists of a nanowire with a gate electrode wrapped around the circumference. Since the entire nanowire forms the channel, this configuration provides the best possible electrostatic control of the channel and offers a good candidate for the miniaturization of ... Read More
This tutorial analyzes the hysteresis of the conductance-gate-voltage (G-Vg) curves of an InAs nanowire FET, using the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without a large increase of computational costs. The ... Read More
This example shows an approximate approach to model a dot-in-well solar cell as described by Asahi et al. in the reference paper. The quantum wells and the layers of quantum dots are each treated as lumped energy levels in the band gap. The authors specify transitions between the dot ... Read More
This 3D model of a nanowire MOSFET employs the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without requiring excessively high computational costs. The oxide layer is simulated explicitly with geometric domains, and ... Read More