The Application Gallery features COMSOL Multiphysics® tutorial and demo app files pertinent to the electrical, structural, acoustics, fluid, heat, and chemical disciplines. You can use these examples as a starting point for your own simulation work by downloading the tutorial model or demo app file and its accompanying instructions.
Search for tutorials and apps relevant to your area of expertise via the Quick Search feature. To download the MPH-files, log in or create a COMSOL Access account that is associated with a valid COMSOL license. Note that many of the examples featured here can also be accessed via the Application Libraries that are built into the COMSOL Multiphysics® software and available from the File menu.
This tutorial analyzes the hysteresis of the conductance-gate-voltage (G-Vg) curves of an InAs nanowire FET, using the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without a large increase of computational costs. The ... Read More
In a MESFET, the gate forms a rectifying junction that controls the opening of the channel by varying the depletion width of the junction. In this model we simulate the response of a n-doped GaAs MESFET to different drain and gate voltages. For a n-doped material the electron ... Read More
This tutorial demonstrates the use of the density-gradient formulation to include the effect of quantum confinement in the device physics simulation of a silicon inversion layer. This formulation requires only a moderate increase of computational resources as compared to the conventional ... Read More
This tutorial model solves the Gross–Pitaevskii Equation for the ground state of a Bose–Einstein condensate in a harmonic trap, using the Schrödinger Equation physics interface in the Semiconductor Module. The equation is essentially a nonlinear single-particle Schrödinger Equation, with ... Read More
Surface acoustic phonons and surface roughness have an important effect on the carrier mobility, especially in the thin inversion layer under the gate in MOSFETs. The Lombardi surface mobility model adds surface scattering resulting from these effects to an existing mobility model using ... Read More